Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field.
We present the design, fabrication, and characterization of an implantable neural interface based on anisotropic magnetoresistive (AMR) magnetic-field sensors.
AMR is an abbreviation for Anisotropic Magneto Resistance. These are elements that have a function where the resistance decreases when a magnetic field is ...
This work provides insight into the anomalous AMR effect of topological materials and is useful for understanding the evolution of topological bands in a ...
Anisotropic MR is a phenomenon that occurs in ferromagnets in which the resistivity depends on the angle between the current and magnetization directions.
The anisotropic magnetoresistance (AMR) effect is a fundamental phenomenon in which the electrical resistivity depends on the relative angle between the ...